With the decline of the solar polycrystalline and single crystal silicon wire cutting market, the domestic green silicon carbide micropowder cutting market is extremely shrinking. However, in the field of semiconductor wire cutting, especially in the inner circular cutting of single crystal silicon, since the liquid cutting of the silicon carbide cutting line can protect the smoothness of the surface of the cut wafer more than the solid cutting of the diamond cutting line, the green silicon carbide fine powder There is always a place in the semiconductor industry. However, since the requirements for material properties of semiconductor wire-cut silicon carbide micropowder are much different from those of conventional abrasives, higher requirements are also placed on quality.
01
Since the domestic production of silicon carbide micro-powder for semiconductor wire cutting started late, domestic semiconductor manufacturers began to import products from well-known manufacturers in developed countries, such as Germany ESK and Japan FUJIMI. Therefore, some domestic silicon carbide powder manufacturers mostly use European Standard (FEPA), Japanese Standard (JlS) and American Standard (ANSI).
However, since domestic semiconductor wire-cut silicon carbide fine powder is mostly exported to Japan, it is the Japanese standard that is widely used in China. The biggest difference between domestic and foreign standards is that the particle size index adopted by foreign countries has increased D0 (maximum particle size), but domestic standards are not. The current standard of domestic standards mainly stays in the standard of ordinary abrasives and abrasive tools.
The particle size of the largest particle size does not have a great influence on the final product of ordinary abrasives and abrasives, but the effect on the fine powder for semiconductor wire cutting is obvious. It can be seen from the following table that the foreign standard of D0 is used: for the particle size of the micro-powder for semiconductor wire cutting, the remarkable feature is that the particle size distribution is very concentrated.
02
The chemical composition has an influence on the crystal form and use effect of the silicon carbide fine powder. The higher the chemical composition, the better the overall performance.
03
As a wire-cut fine powder of a semiconductor, the particle shape has a significant influence on the processing effect of the sample. In general, unlike the mechanism of the grinding action used in the grinding process, the silicon carbide fine powder for semiconductor wire cutting is required to have a certain roundness value, and the particles are sharply defined.
04
Bulk density is another important indicator of silicon carbide micropowder. When the particle size of the fine powder is on the order of micrometers, the surface area, surface energy and surface binding energy increase rapidly. The main factors affecting the bulk density of fine powder are specific surface area, surface energy, surface binding energy and interaction force between particles.
05
Due to the high cleanliness of the chip on the surface, if the surface of the chip is contaminated with impurities, the product may be scrapped. When cutting or polishing the chip, it is easy to bring in impurities, so the surface cleanliness of the semiconductor wire cutting fine powder is required to be high.
06
Generally, the pickling process is carried out using a micropowder process. In the whole process, if the washing is not thorough enough, acid residues and impurities will remain on the surface of the fine powder particles. These residues may not be obvious in the micronized stage, but if they are made into products, they will show performance differences, thus affecting the product. quality.
In addition to the above fixed indicators, semiconductor wire-cut silicon carbide micropowders also have indicators such as fluidity and hydrophilicity, which need to be gradually improved. There is still a big gap between domestic manufacturers and well-known foreign silicon carbide manufacturers. We must strive to catch up.
market expectation
In the international and domestic markets, the foreign semiconductor market is relatively mature, and the domestic market is in its infancy. However, at this stage, the state has vigorously developed the semiconductor industry and included the development of 12-inch single-chips in national planning. Industry experts have comprehensively predicted that in the next five years, the development of the domestic market will inevitably drive the silicon carbide wire cutting micro-powder market into the next small climax.
These will be the opportunities faced by manufacturers of silicon carbide micropowders. We need to strengthen scientific research, do a good job in technology deposition, and form technological advantages; strengthen domestic and international peer exchanges, strengthen contact with semiconductor manufacturers, and gain the technology and market first. Machine, wind and waves, and strive to move forward!
